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| savantic semiconductor product specification silicon npn power transistors bdy57 BDY58 d escription with to-3 package high current capability fast switching speed applications for use in low frequency large signal power amplifications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit bdy57 120 v cbo collector-base voltage BDY58 open emitter 160 v bdy57 80 v ceo collector-emitter voltage BDY58 open base 125 v v ebo emitter-base voltage open collector 10 v i c collector current 25 a i b base current 6 a p t total power dissipation t c =25 175 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors bdy57 BDY58 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bdy57 80 v ceo(sus) collector-emitter sustaining voltage BDY58 i c =0.1a ; i b =0 125 v bdy57 120 v (br)cbo collector-emitter breakdown voltage BDY58 i c =5ma ; i e =0 160 v v cesat collector-emitter saturation voltage i c =10a ;i b =1a 1.4 v v besat base-emitter saturation voltage i c =10a ;i b =1a 1.4 v i cbo collector cut-off current v cb =100v; i e =0 0.5 ma i cer collector cut-off current v ce =80v; r be =10 ? ;t c =100 10 ma i ebo emitter cut-off current v eb =10v; i c =0 0.5 ma h fe-1 dc current gain i c =10a ; v ce =4v 20 60 h fe-2 dc current gain i c =20a ; v ce =4v 15 f t transition frequency i c =1a ; v ce =15v,f=10mhz 10 mhz t on turn-on time i c =15a ;i b =1.5a 1.0 s savantic semiconductor product specification 3 silicon npn power transistors bdy57 BDY58 package outline fig.2 outline dimensions |
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